Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
-60
Collector-Emitter Breakdown Voltage (Note 8)
BVCEO
-60
Emitter-Base Breakdown Voltage
BVEBO
-5
Collector Cut-off Current
—
ICBO
—
Collector Cutoff Current
Emitter Cut-off Current
ON CHARACTERISTICS (Note 8)
ICEX
IEBO
—
75
Typ
-120
-80
-8.8
-1
—
—
—
208
100
207
Static Forward Current Transfer Ratio
hFE
100
202
100
169
50
103
Collector-Emitter Saturation Voltage
—
VCE(SAT)
—
-130
-0.4
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
—
VBE(SAT))
—
Cobo
—
Cibo
-0.86
-1
—
—
Current Gain-Bandwidth Product
fT
200
—
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
tON
tD
tR
tOFF
tS
tF
Note:
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max
—
—
—
-50
-50
-50
-50
—
—
—
300
—
-400
-1.6
-1.3
-2.6
8
30
45
10
40
100
80
30
DXT2907A
Unit
Test Condition
V
IC = -100µA
V
IC = -10mA
V
IE = -100µA
nA
VCB = -50V
µA VCB = -50V, TA = +100°C
nA
VCE = -30V, VEB(OFF) = -0.5V
nA
VEB = -5V
—
IC = -100A, VCE = -10V
—
IC = -1mA, VCE = -10V
—
IC = -10mA, VCE = -10V
—
IC = -150mA, VCE = -10V
—
IC = -500mA, VCE = -10V
mV IC = -150mA, IB = -15mA
V
IC = -500mA, IB = -50mA
V
IC = -150mA, IB = -15mA
V
IC = -500mA, IB = -50mA
pF
pF
MHz
ns
ns
ns
ns
ns
ns
VCB = -10V, IE = 0, f = 1MHz
VEB = -2V, f = 1MHz, IC = 0
VCE = -20V, IC = -50mA,
f = 100MHz
VCC = -30V, IC = -150mA,
IB1 = -15mA
VCC = -6V, IC = -150mA,
IB1 =IB2 = -15mA
DXT2907A
Document number: DS30944 Rev. 6 - 2
3 of 7
www.diodes.com
January 2016
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