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11DQ04 データシートの表示(PDF) - Vishay Semiconductors

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11DQ04
Vishay
Vishay Semiconductors 
11DQ04 Datasheet PDF : 5 Pages
1 2 3 4 5
11DQ03, 11DQ04
Schottky Rectifier, 1.1 A Vishay High Power Products
10
100
TJ = 25˚C
TJ = 150˚C
TJ = 125˚C
1
TJ = 25˚C
10
0
10 20 30 40 50
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
150
120
DC
90
0.1
0
0.3
0.6
0.9
1.2
1.5
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
60
Square wave (D = 0.50)
80% Rated VRapplied
30
see note (1)
0
0 0.3 0.6 0.9 1.2 1.5
Average Forward Current - IF(AV) (A)
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current
100
10 TJ = 150˚C
1
125˚C
0.1
0.8
D = 0.20
D = 0.25
D = 0.33
0.6 D = 0.50
D = 0.75
RMS Limit
0.4
DC
0.01
25˚C
0.2
0.001
0.0001
0
10
20
30
40
Reverse Voltage - V (V)
R
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
0
0 0.3 0.6 0.9 1.2 1.5
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Document Number: 93205
Revision: 06-Nov-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3

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