HA-5142
Die Characteristics
DIE DIMENSIONS:
104 mils x 55 mils x 19 mils
2650µm x 1400µm x 483µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ±2kÅ
PASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
TRANSISTOR COUNT:
72
SUBSTRATE POTENTIAL (POWERED UP):
V-
PROCESS:
Bipolar/JFET Dielectric Isolation
Metallization Mask Layout
HA-5142
V-
+IN1
-IN1
OUT1
+IN2 -IN2
OUT2 NC
V+
8