2SB1507 データシートの表示（PDF） - Inchange Semiconductor

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2SB1507

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB1507

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞

V(BR)CBO Collector-Base Breakdown Voltage

IC= -1m A; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -1m A; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=B -0.4A

ICBO

Collector Cutoff Current

VCB= -40V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

hFE-1

DC Current Gain

IC= -1A; VCE= -2V

hFE-2

DC Current Gain

IC= -5A; VCE= -2V

fT

Current-Gain—Bandwidth Product

IC= -1A; VCE= -5V

Switching Times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= -2A; RL= 10Ω,

IB1= -IB2= -0.2A, VCC= -20V

MIN TYP. MAX UNIT

-50

V

-60

V

-6

V

-0.4 V

-100 μA

-100 μA

70

280

30

10

MHz

0.2

μs

0.7

μs

0.1

μs

‹ hFE-1 Classifications

Q

R

S

70-140 100-200 140-280

isc Website：www.iscsemi.cn

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