BC550C,112 データシートの表示（PDF） - NXP Semiconductors.
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BC550C,112 Datasheet PDF : 7 Pages
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NXP Semiconductors
NPN general purpose transistors
Product data sheet
BC549; BC550
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
IEBO
hFE
VCEsat
VBEsat
VBE
Cc
Ce
fT
F
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
CONDITIONS
VCB = 30 V; IE = 0 A
VCB = 30 V; IE = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A
VCE = 5 V; see Fig.2
IC = 10 μA
IC = 2 mA
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
IC = 10 mA; IB = 0.5 mA; note 1
IC = 100 mA; IB = 5 mA; note 1
VCE = 5 V; IC = 2 mA; note 2
VCE = 5 V; IC = 10 mA; note 2
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
VEB = 0.5 V; IC = ic = 0 A;
f = 1 MHz
VCE = 5 V; IC = 10 mA;
f = 100 MHz
VCE = 5 V; IC = 200 μA;
RS = 2 kΩ; f = 10 Hz to 15.7 kHz
VCE = 5 V; IC = 200 μA;
RS = 2 kΩ; f = 1 kHz; B = 200 Hz
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
MIN. TYP. MAX. UNIT
−
−
15 nA
−
−
5
μA
−
−
100 nA
−
270 −
420 520 800
−
90 250 mV
−
200 600 mV
−
700 −
mV
−
900 −
mV
580 660 700 mV
−
−
770 mV
−
1.5 −
pF
−
11 −
pF
100 −
−
MHz
−
−
4
dB
−
−
4
dB
2004 Oct 11
3
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