BCW89 データシートの表示（PDF） - Diotec Semiconductor Germany

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BCW89

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

General Purpose Transistors

BCW 89

Characteristics (Tj = 25/C)

Base saturation voltage – Basis-Sättigungsspannung 1)

- IC = 10 mA, - IB = 0.5 mA

- VBEsat

- IC = 50 mA, - IB = 2.5 mA

- VBEsat

DC current gain – Kollektor-Basis-Stromverhältnis 1)

- VCE = 5 V, - IC = 10 :A

hFE

- VCE = 5 V, - IC = 2 mA

hFE

Base-Emitter voltage – Basis-Emitter-Spannung 1)

- VCE = 5 V, - IC = 2 mA

Gain-Bandwidth Product – Transitfrequenz

- VBEon

- VCE = 5 V, - IC = 10 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, IE = ie = 0, f = 1 MHz

CCB0

Noise figure – Rauschzahl

- VCE = 5 V, - IC = 200 :A, RG = 2 kS,

f = 1 kHz, )f = 200 Hz

F

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Kennwerte (Tj = 25/C)

Min.

Typ.

Max.

–

720 mV

–

–

810 mV

–

–

90

–

120

–

260

600 mV

–

750 mV

–

150 MHz

–

–

4.5 pF

–

–

–

10 dB

RthA

420 K/W 2)

Marking – Stempelung

BCW 89 = H3

1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

51

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