BD644 データシートの表示（PDF） - Inchange Semiconductor

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BD644

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

BD644

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0

-45

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB=B -12mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB=B -50mA

VBE(sat) Base-Emitter Saturation Voltage

IC= -5A; IB=B -50mA

VBE(on) Base-Emitter On Voltage

IC= -3A ; VCE= -3V

ICBO

Collector Cutoff Current

VCB= -45V; IE= 0

VCB= -30V; IE= 0; TC= 150℃

-2.0

V

-2.5

V

-3.0

V

-2.5

V

-0.2

mA

-2.0

ICEO

Collector Cutoff Current

VCE= -25V; IB=B 0

-0.5 mA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-5

mA

hFE

DC Current Gain

IC= -3A ; VCE= -3V

750

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