BD800 データシートの表示（PDF） - Inchange Semiconductor

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BD800

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BD800

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; IB= 0

-80

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB=B -0.3A

VBE(on) Base-Emitter On Voltage

IC= -3A ; VCE= -2V

ICBO

Collector Cutoff Current

VCB= -80V; IE= 0

-1

V

-1.6 V

-0.1 mA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-1 mA

hFE-1

DC Current Gain

IC= -1A ; VCE= -2V

30

hFE-2

DC Current Gain

IC= -3A ; VCE= -2V

15

fT

Current-Gain—Bandwidth Product

IC= -0.25A ;VCE= -10V,ftest= 1MHz

3

MHz

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