BU508DF データシートの表示（PDF） - Comset Semiconductors

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BU508DF

SILICON DIFFUSED POWER TRANSISTOR

Comset Semiconductors 

SEMICONDUCTORS

NPN BU508DF

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

VCEO

Collector-Emitter

Breakdown Voltage

ICES

Collector Cutoff Current

IEBO

VCE(SAT)

VBE(SAT)

VF

hFE

COB

fT

Emitter Cutoff Current

Collector-Emitter

saturation Voltage

Base-Emitter saturation

Voltage

Diode Forwardvoltage

DC Current Gain

Output Capacitance

Transition Frequency

Test Condition(s)

IC= 100 mA, IB=0

L= 25mH

VBE =0, VCE = 1500 V

VBE =0, VCE = 1500 V

Tj =125°C

VEB= 5 V, IC=0

IC= 4.5 A, IB= 1.6 A

IC= 4.5 A, IB= 2 A

IF= 4.5 A

IC= 500 mA, VCE = 5 V

VCB = 10 V, IE=0, f= 1MHz

VCE= 5 V, IC= 100 mA

Min Typ Max Unit

700 -

-

V

-

-

1

mA

-

-

2

-

- 300 mA

-

-

1

V

-

- 1.1

- 1.6 2

V

10 - 30 -

3

-

-

A

-

7

- MHz

15/10/2012

COMSET SEMICONDUCTORS

2|3

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