NPN BUX98
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO(SUS)
ICER
ICEO
ICES
IEBO
VCE(SAT)
VBE(SAT)
ton
ts
tf
Collector-Emitter Sustaining
Voltage (*)
IC =100 mA
VCE = VCES , RBE = 10Ω
Collector Cutoff Current
VCE = VCES , RBE = 10Ω
TCASE = 125°C
Collector Cutoff Current
VCE = VCEO , IB =0A
VCE = VCES , VBE = 0
Collector Cutoff Current
VCE = VCES , VBE = 0
TCASE = 125°C
Emitter Cutoff Current
VEB =5.0 V, IC=0
Collector-Emitter saturation
Voltage (*)
IC =12 A , IB =3 A
IC =16 A , IB =5 A
IC =20 A , IB =8 A
Base-Emitter saturation Voltage IC =12 A , IB =3 A
(*)
IC =20 A , IB =8 A
Turn-on time
Storage time
File time
RESISTIVE LOAD
IC=8 A , IB=1 A
VCC=150 V
IC=12 A , VCC=250 V
IB1 = -IB2 =3 A
Min Typ Max Unit
700 -
-
V
-
-
1
-
-
8 mA
-
-
2 mA
-
-
1
-
-
6 mA
-
-
2 mA
-
- 1.5
-
-
2
-
-
3
V
-
- 1.6
-
-
2
- 0.5 1
- 1.5 3 µs
- 0.2 0.8
(*) Pulse Duration = 300 µs, Duty Cycle ≤ 1.5%
26/10/2012
COMSET SEMICONDUCTORS
2/3