TYPE: BUZ50A
Drain Source Diode Characteristics
Forward On Voltage
IF = 5.0A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
IF = 2.5A
diF/dt = 100A/µs, VGS = 0V
VR = 100V
Total Gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-On Time
Switching Characteristics
Turn-Off Time
Delay Time (Turn On)
Rise Time
Delay Time (Turn Off)
Fall Time
VDD = 30V, ID = 2.0A
VGS = 10V, RGS = 50Ω
Rgen = 50Ω
Junction To Case
Thermal Characteristics
Junction To Ambient
Internal Package Inductance
Internal Drain Inductance
Internal Source Inductance
Symbol
VSD
trr
Qrr
Qg
Qgs
Qgd
Min Typ Max Units
1.3 Vdc
2000
ns
15
µC
nC
nC
nC
Symbol Min Typ Max Units
ton
toff
td(on)
45 ns
tr
60 ns
td(off)
140 ns
tf
80 ns
Symbol
RθJC
RθJA
Symbol
Ld
Ls
Units
°C/W
°C/W
Typ Max Units
4.5
nH
7.5
nH
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