DE150-201N09A データシートの表示（PDF） - IXYS CORPORATION
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DE150-201N09A Datasheet PDF : 4 Pages
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DE150-201N09A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
Symbol Test Conditions
Maximum Ratings
VDSS
=
ID25
=
RDS(on) =
200 V
15 A
0.2 Ω
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PDC
PDHS
PDAMB
RthJC
RthJHS
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
IS = 0
Tc = 25°C
Derate 4.4W/°C above 25°C
Tc = 25°C
200 V
200 V
±20 V
±30 V
15.0 A
90 A
9.0 A
7.5 mJ
5 V/ns
>200 V/ns
200 W
80 W
3.5 W
0.74 C/W
1.15 C/W
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min. typ. max.
VGS = 0 V, ID = 3 ma
200
V
VDS = VGS, ID = 4 ma
2
3
4V
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
25 µA
250 µA
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
0.2 Ω
PDC
= 200 W
GATE
DRAIN
SG1 SG2
SD1 SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Qg process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
gfs
TJ
TJM
Tstg
TL
Weight
VDS = 15 V, ID = 0.5ID25, pulse test
1.6mm (0.063 in) from case for 10 s
3.0
8.0
S
-55
+175 °C
1750
°C
-55
+175 °C
300
°C
2
g
Advantages
• Optimized for RF and high speed
switching at frequencies to >100MHz
• Easy to mount—no insulators needed
• High power density
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