MITSUBISHI Nch POWER MOSFET
FS5SM-14A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 700V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 2A, VGS = 10V
ID = 2A, VGS = 10V
ID = 2A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 2A, VGS = 10V,
RGEN = RGS = 50Ω
IS = 2A, VGS = 0V
Channel to case
Limits
Unit
Min.
Typ. Max.
700
—
—
V
±30
—
—
V
—
—
±10
µA
—
—
1
mA
2
3
4
V
—
2.0
2.6
Ω
—
4.0
5.2
V
2.5
4.2
—
S
—
770
—
pF
—
88
—
pF
—
16
—
pF
—
15
—
ns
—
18
—
ns
—
90
—
ns
—
25
—
ns
—
1.0
1.5
V
—
—
1.25 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
80
60
40
20
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
TC = 25°C
Pulse Test
16
VGS = 20V
10V
12
6V
8
5V
4
PD = 100W
0
0
10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
MAXIMUM SAFE OPERATING AREA
102
7
5
3
2
101
tw = 10ms
7
5
3
100ms
2
100
1ms
7
5
3 TC = 25°C
10ms
2 Single Pulse
100ms
DC
10–1
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
5.0
VGS = 20V 10V
TC = 25°C
Pulse Test
4.0
5V
3.0
2.0
4.5V
1.0
4V
0
0
4
8
12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999