GIB2404HE3/81 データシートの表示（PDF） - Vishay Semiconductors
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GIB2404HE3/81 Datasheet PDF : 4 Pages
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www.vishay.com
GIB2401, GIB2402, GIB2403, GIB2404
Vishay General Semiconductor
Dual Common Cathode Ultrafast Plastic Rectifier
D2PAK (TO-263AB)
K
PIN 1
PIN 2
2
1
K
HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
VF
TJ max.
Package
16 A
50 V, 100 V, 150 V, 200 V
125 A
35 ns
0.895 V
150 °C
D2PAK (TO-263AB)
Circuit configurations
Common cathode
FEATURES
• Power pack
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, inverters, freewheeling diodes, DC/DC converters,
and other power switching application.
MECHANICAL DATA
Case: D2PAK (TO-263AB)
Molding compound meets UL 94V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage
Max. RMS voltage
Max. DC blocking voltage
Max. average forward rectified current at TC = 125 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
VRRM
VRMS
VDC
IF(AV)
IFSM
Operating junction and storage temperature range
TJ, TSTG
GIB2401
50
35
50
GIB2402 GIB2403
100
150
70
105
100
150
16
125
-65 to +150
GIB2404
200
140
200
UNIT
V
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL GIB2401 GIB2402 GIB2403
IF = 4 A TJ = 25 °C
Max. instantaneous forward voltage
per diode
IF = 8 A
IF = 4 A
TJ = 25 °C
TJ = 100 °C
VF
IF = 8 A TJ = 100 °C
Max. DC reverse current per diode at
rated DC blocking voltage
TC = 25 °C
TC = 100 °C
IR
Max. reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
Typical junction capacitance per diode 4 V, 1 MHz
CJ
0.900
0.975
0.800
0.895
50
150
35
85
GIB2404
5.0
500
UNIT
V
μA
ns
pF
Revision: 08-Jun-2018
1
Document Number: 88633
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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