Electrical Characteristics at TA = 25°C
Symbol
IV
Description
Luminous Intensity
2q1/2
lPEAK
Including Angle Between
Half Luminous Intensity
Points
Peak Wavelength
Device
HLMP-
1320
1321
1420
1421
1520
1521
All
Min.
8.6
8.6
9.2
9.2
6.7
6.7
Typ.
30
30
15
15
22
22
45
132x
635
142X
583
152X
565
Max. Units Test Conditions
mcd
IF = 10 mA
(Figure 3)
mcd
IF = 10 mA
(Figure 8)
mcd
IF = 10 mA
(Figure 3)
Deg. IF = 10 mA
See Note 1
(Figures 6, 11, 16, 21)
nm
Measurement
at Peak (Figure 1)
Dl1/2
Spectral Line Halfwidth
ld
Dominant Wavelength
ts
Speed of Response
C
Capacitance
RqJ-PIN
VF
Thermal Resistance
Forward Voltage
VR
Reverse Breakdown Voltage
hV
Luminous Efficacy
132x
142X
152X
132x
142X
152X
132x
142X
152X
132x
142X
152X
All
132x
142X
152X
All
5.0
132x
142X
152X
40
36
28
626
585
569
90
90
500
11
15
18
290
1.9
2.4
2.0
2.4
2.1
2.7
145
500
595
nm
nm
See Note 2 (Figure 1)
ns
pF
VF = 0; f = 1 MHz
°C/W
V
Junction to
Cathode Lead
IF = 10 mA
V
IR = 100 µA
lwuamttens See Note 3
Notes:
1. q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
2. The dominant wavelength, ld, is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of
the device.
3. Radiant intensity, Ie, in watts/steradian, may be found from the equation Ie = lv/hv, where lv is the luminous intensity in candelas and hv is the
luminous efficacy in lumens/watt.
3