Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
部品番号
コンポーネント説明
IN1705(2011) データシートの表示(PDF) - IK Semicon Co., Ltd
部品番号
コンポーネント説明
メーカー
IN1705
(Rev.:2011)
Micro Monitor Supply Control
IK Semicon Co., Ltd
IN1705 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
IN1705
Table 3 – DC electrical characteristics (T
A
= - 40
°
to + 85
°
С)
Symbol
V
IL
V
IH
I
OL
I
OH
I
OH1
V
OH
I
LIL1
I
LIL2
I
LIL3
I
LIH
I
СС
V
CCTP
V
TP
Parameter
Test conditions
Typical
min
max
Input voltage, low level
V
СС
=from 2.4 to 5.5V
Input voltage, high level
V
СС
=from 2.4 to 5.5V
Output current, low
V
СС
=from 2.4 to 5.5V
level (NMI, RST)
V
OL
= 0.4V
Output current, high
level (WDS, NMI)
V
СС
=from 4.5 to 5.5V
V
OH
= 2.4V
Output current, high
level, (RST)
V
CC
=from 5.0 to 5.5V
V
OH
=2.4V
Output voltage, high level V
СС
=from 5.0 to 5.5V
(RST)
I
OH
= -
500мкА
Input leakage current,
low level (IN)
V
СС
=from 1.2 to 5.5V
V
IL
= 0 V
Input leakage current,
low level (ST)
V
СС
= 5.5V
V
IL
= 0 V
Input leakage current,
low level (PBRST)
V
СС
= 5.5V
V
IL
= 0 V
Input leakage current,
high level
V
СС
=from 1.2 to 5.5V
V
IH
= V
СС
Operating current
V
СС
=from 1.2 to 5.5V
V
IL
=0 V, V
IH
=V
CC
V
CC
trip point
V
IL
= 0 V, V
IH
=V
CC
IN input trip point
V
СС
=5.0 V
V
IL
= 0 V, V
IH
=V
CC
-
2.0
10.0
-100
-10
V
СС
-0.3
-
-10
-50
-
-
4.5
1.2
0.5
-
-1000
-
-
-1.0
-100
-450
1.0
60
4.75
1.3
Units
V
V
mA
µ
A
mA
V
µ
A
µ
A
µ
A
µ
A
µ
A
V
V
2011, February, Rev. 01
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]