IRFL9014, SiHFL9014
Vishay Siliconix
600
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
500
Crss = Cgd
Coss = Cds + Cgd
400
300
Ciss
Coss
200
100
0
100
Crss
101
91195_05
- VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
101
150 °C
25 °C
100
10-1
1.0
91195_07
VGS = 0 V
2.0
3.0
4.0
5.0
6.0
- VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID = -6.7 A
16
12
VDS = -48 V
VDS = -30 V
8
4
0
0
91195_06
For test circuit
see figure 13
4
8
12
16
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
102
Operation in this area limited
5
by RDS(on)
2
10
100 µs
5
1 ms
2
1
10 ms
5
2
0.1 2
0.1
TC = 25 °C
TJ = 150 °C
Single Pulse
5
2
1
5
2
10
5
2
102
5
103
91195_08
- VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91195
S-81412-Rev. A, 07-Jul-08