V3036S データシートの表示（PDF） - Fairchild Semiconductor
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V3036S Datasheet PDF : 8 Pages
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Typical Performance Curves (Continued)
25
VGE = 8.0V
VGE = 5.0V
20 VGE = 4.5V
VGE = 4.0V
15 VGE = 3.7V
10
5
0
0
TJ = 175°C
1.0
2.0
3.0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
25
VGE = 4.0V
20
15
10
5
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
10000
1000
VECS = 24V
100
10
VCES = 300V
1
VCES = 250V
0.1
-50 -25 0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
25
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
20
15
TJ = 150°C
10
TJ = 25°C
5
TJ = -40°C
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
2.2
VCE = VGE
2.0
ICE = 1mA
1.8
1.6
1.4
1.2
1.0
-50 -25 0
25 50 75 100 125 150 175
TJ JUNCTION TEMPERATURE (°C)
Figure 10. Threshold Voltage vs Junction
Temperature
12
ICE = 6.5A, VGE = 5V, RG = 1KΩ
Resistive tOFF
10
8
Inductive tOFF
6
4
Resistive tON
2
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
©2004 Fairchild Semiconductor Corporation
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004
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