J308 データシートの表示（PDF） - ON Semiconductor

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J308

JFET VHF/UHF Amplifiers

ON Semiconductor 

J308

Characteristic

SMALL−SIGNAL CHARACTERISTICS

Common−Source Input Conductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)

J308

J309

J310

Common−Source Output Conductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)

Common−Gate Power Gain

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)

1. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 3.0%.

SMALL−SIGNAL CHARACTERISTICS (continued)

Common−Source Forward Transconductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)

Common−Gate Input Conductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)

Common−Source Forward Transconductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)

J308

J309

J310

Common−Source Output Conductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)

Common−Gate Forward Transconductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)

J308

J309

J310

Common−Gate Output Conductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)

J308

J309

J310

Gate−Drain Capacitance

(VDS = 0, VGS = −10 Vdc, f = 1.0 MHz)

Gate−Source Capacitance

(VDS = 0, VGS = −10 Vdc, f = 1.0 MHz)

FUNCTIONAL CHARACTERISTICS

Noise Figure

(VDS = 10 Vdc, ID = 10 mAdc, f = 450 MHz)

Equivalent Short−Circuit Input Noise Voltage

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)

Symbol

Min

Typ

Max

Unit

Re(yis)

mmhos

—

0.7

—

—

0.7

—

—

0.5

—

Re(yos)

—

0.25

—

mmhos

Gpg

—

16

—

dB

Re(yfs)

Re(yig)

gfs

gos

gfg

gog

Cgd

Cgs

—

12

—

mmhos

—

12

—

mmhos

μmhos

8000

—

20000

10000

—

20000

8000

—

18000

—

—

250

μmhos

μmhos

—

13000

—

—

13000

—

—

12000

—

μmhos

—

150

—

—

100

—

—

150

—

—

1.8

2.5

pF

—

4.3

5.0

pF

NF

—

1.5

—

dB

en

—

10

—

nVń ǸHz

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