MBRB2535CTLG データシートの表示（PDF） - ON Semiconductor

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MBRB2535CTLG

SWITCHMODE™ Power Rectifier

ON Semiconductor 

MBRB2535CTL

MAXIMUM RATINGS (Per Leg)

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current, (Rated VR, TC = 110°C)

Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 90°C)

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

VRRM

VRWM

VR

IF(AV)

IFRM

IFSM

35

V

12.5

A

25

A

150

A

Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)

IRRM

1.0

A

Storage Temperature Range

Tstg

−65 to +150

°C

Operating Junction Temperature

TJ

−65 to +125

°C

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

THERMAL CHARACTERISTICS (Per Leg)

Characteristic

Symbol

Value

Unit

Thermal Resistance,

Junction−to−Case

Junction−to−Ambient (Note 1)

RqJC

RqJA

1.0

°C/W

84

ELECTRICAL CHARACTERISTICS (Per Leg)

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 25 A, TJ = 25°C)

(iF = 12.5 A, TJ = 125°C)

(iF = 12.5 A, TJ = 25°C)

Maximum Instantaneous Reverse Current (Note 2)

(Rated dc Voltage, TJ = 125°C)

(Rated dc Voltage, TJ = 25°C)

1. When mounted using minimum recommended pad size on FR−4 board.

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

vF

V

0.55

0.41

0.47

IR

mA

500

10

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