MMBT4401L-AL3-R(2016) データシートの表示（PDF） - Unisonic Technologies
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MMBT4401L-AL3-R Datasheet PDF : 6 Pages
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MMBT4401
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) (Note)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
40
V
VEBO
6
V
Collector Current-Continuous
Total Device Dissipation
Derate above 25°C
IC
600
mA
PD
350
mW
2.8
mW/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
CHARACTERISTIC
SYMBOL
RATING
Junction to Ambient
θJA
357
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (note)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Base Cut-off Current
ON CHARACTERISTICS (note)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
BVCBO
BVCEO
BVEBO
ICEX
IBL
IC=0.1mA, IE=0
IC=1mA, IB=0
IE=0.1mA, IC=0
VCE=35V, VEB=0.4V
VCE=35V, VEB=0.4V
hFE1 VCE=1V, IC=0.1mA
hFE2 VCE=1V, IC=1mA
hFE3 VCE=1V, IC=10mA
hFE4 VCE=1V, IC=150mA
hFE5 VCE=2V, IC=500mA
VCE(SAT1) IC=150mA, IB=15mA
VCE(SAT2) IC=500mA, IB=50mA
VBE(SAT1) IC=150mA, IB=15mA
VBE(SAT2) IC=500mA, IB=50mA
SMALL SIGNAL CHARACTERISTICS1
Current Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
fT VCE=10V, IC=20mA, f=100MHz
CCB VCB=5V, IE=0, f=140kHz
CEB VBE=0.5V, IC=0, f=140kHz
hIE VCE=10V, IC=1mA, f=1kHz
hRE VCE=10V, IC=1mA, f=1kHz
hFE VCE=10V, IC=1mA, f=1kHz
hOE VCE=10V, IC=1mA, f=1kHz
SWITCHING CHARACTERISTICS
Delay Time
tD
VCC=30V, VEB=2V, IC=150mA
IB1=15mA
Rise Time
tR
VCC=30V, VEB=2V, IC=150mA
IB1=15mA
Storage Time
tS
Fall Time
tF
VCC=30V, IC=150mA
IB1= IB2=15mA
Note: Pulse test: PulseWidth ≤ 300s, Duty Cycle ≤ 2%.
MIN TYP MAX UNIT
60
V
40
V
6
V
µA
µA
20
40
80
100
300
40
0.4 V
0.75 V
0.75
0.95 V
1.2 V
250
MHz
6.5 pF
30 pF
1
15 kΩ
0.1
8 ×10-4
40
500
1
30 µmhos
15 ns
20 ns
225 ns
30 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R206-035.I
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