MMFT960T1 データシートの表示（PDF） - ON Semiconductor
部品番号
コンポーネント説明
メーカー
MMFT960T1 Datasheet PDF : 4 Pages
| |||
MMFT960T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0, ID = 10 mA)
V(BR)DSS
60
−
−
Vdc
Zero Gate Voltage Drain Current
(VDS = 60 V, VGS = 0)
IDSS
−
−
10
mAdc
Gate−Body Leakage Current
(VGS = 15 Vdc, VDS = 0)
IGSS
−
−
50
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
1.0
−
3.5
Vdc
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 1.0 A)
RDS(on)
−
−
1.7
W
Drain−to−Source On−Voltage
(VGS = 10 V, ID = 0.5 A)
(VGS = 10 V, ID = 1.0 A)
VDS(on)
−
−
Vdc
−
0.8
−
1.7
Forward Transconductance
(VDS = 25 V, ID = 0.5 A)
gfs
−
600
−
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Total Gate Charge
Gate−Source Charge
(VGS = 10 V, ID = 1.0 A, VDS = 48 V)
Gate−Drain Charge
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Ciss
Coss
Crss
Qg
Qgs
Qgd
−
65
−
pF
−
33
−
−
7.0
−
−
3.2
−
nC
−
1.2
−
−
2.0
−
TYPICAL ELECTRICAL CHARACTERISTICS
5
TJ = 25°C
4
VGS = 10 V
3
8V
7V
2
6V
5V
1
4V
0
0
2
4
6
8
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
1
TJ = 25°C
0.8
TJ = −55°C
TJ = 125°C
0.6
0.4
VDS = 10 V
0.2
0
0
2
4
6
8
10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
http://onsemi.com
2
Share Link: 