PBSS3515E,135 データシートの表示（PDF） - NXP Semiconductors.
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PBSS3515E,135 Datasheet PDF : 12 Pages
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NXP Semiconductors
PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
collector-base cut-off VCB = −15 V; IE = 0 A
-
-
−100 nA
current
VCB = −15 V; IE = 0 A;
-
-
−50 µA
Tj = 150 °C
IEBO
emitter-base cut-off VEB = −5 V; IC = 0 A
current
-
-
−100 nA
hFE
VCEsat
RCEsat
VBEsat
VBEon
DC current gain
VCE = −2 V; IC = −10 mA
200 -
-
VCE = −2 V; IC = −100 mA [1] 150 -
-
VCE = −2 V; IC = −500 mA [1] 90 -
-
collector-emitter
saturation voltage
IC = −10 mA;
IB = −0.5 mA
-
-
−25 mV
IC = −200 mA;
IB = −10 mA
-
-
−150 mV
IC = −500 mA;
IB = −50 mA
[1] -
-
−250 mV
collector-emitter
IC = −500 mA;
saturation resistance IB = −50 mA
[1] -
300 500 mΩ
base-emitter
saturation voltage
IC = −500 mA;
IB = −50 mA
[1] -
-
−1.1 V
base-emitter turn-on VCE = −2 V; IC = −100 mA [1] -
-
−0.9 V
voltage
td
delay time
VCC = −11 V;
tr
rise time
ton
turn-on time
IC = −250 mA;
IBon = −12.5 mA;
IBoff = 12.5 mA
ts
storage time
-
10 -
ns
-
22 -
ns
-
32 -
ns
-
125 -
ns
tf
fall time
-
37 -
ns
toff
turn-off time
fT
transition frequency VCE = −5 V;
IC = −100 mA;
f = 100 MHz
-
162 -
100 280 -
ns
MHz
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
-
-
10 pF
f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBSS3515E_2
Product data sheet
Rev. 02 — 27 April 2009
© NXP B.V. 2009. All rights reserved.
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