PMBT2222A データシートの表示（PDF） - Philips Electronics
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PMBT2222A Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistors
Product specification
PMBT2222; PMBT2222A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
PMBT2222
collector cut-off current
PMBT2222A
IEBO
emitter cut-off current
PMBT2222A
hFE
DC current gain
VCEsat
VBEsat
Cc
DC current gain
PMBT2222
PMBT2222A
collector-emitter saturation voltage
PMBT2222
PMBT2222A
collector-emitter saturation voltage
PMBT2222
PMBT2222A
base-emitter saturation voltage
PMBT2222
PMBT2222A
base-emitter saturation voltage
PMBT2222
PMBT2222A
collector capacitance
CONDITIONS
MIN.
IE = 0; VCB = 50 V
−
IE = 0; VCB = 50 V; Tj = 125 °C
−
IE = 0; VCB = 60 V
−
IE = 0; VCB = 60 V; Tj = 125 °C
−
IC = 0; VEB = 5 V
−
IC = 0.1 mA; VCE = 10 V
35
IC = 1 mA; VCE = 10 V
50
IC = 10 mA; VCE = 10 V
75
IC = 10 mA; VCE = 10 V; Tamb = −55 °C 35
IC = 150 mA; VCE = 10 V
100
IC = 150 mA; VCE = 1 V
50
IC = 500 mA; VCE = 10 V
30
40
IC = 150 mA; IB = 15 mA; note 1
−
−
IC = 500 mA; IB = 50 mA; note 1
−
−
IC = 150 mA; IB = 15 mA; note 1
−
0.6
IC = 500 mA; IB = 50 mA; note 1
−
−
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
MAX.
10
10
10
10
10
−
−
−
−
300
−
−
−
400
300
1 .6
1
1 .3
1.2
2 .6
2
8
UNIT
nA
µA
nA
µA
nA
mV
mV
V
V
V
V
V
V
pF
1999 Apr 27
3
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