PN2907A
THERMAL DATA
PARAMETER
Thermal Resistance Junction- Ambient
Thermal Resistance Junction- Case
TEST CIRCUIT
PNP EPITAXIAL SILICON TRANSISTOR
SYMBOL
ΘJA
ΘJc
RATINGS
200
83.3
UNIT
°C/W
-30V
0
-16V
≤200ns
1.0kΩ
50Ω
200Ω
Fig. 1 Saturated Turn-On Switching Time Test Circuit
NOTE: BVEBO=5.0V
0
-30V
≤200ns
1.5V
-6.0V
1kΩ
37Ω
1.0kΩ
50Ω
Fig. 2 Saturated Turn-Off Switching Time Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3
QW-R201-041.B