PN2907A
TYPICAL CHARACTERISTICS(cont.)
PNP EPITAXIAL SILICON TRANSISTOR
Switching Times vs Collector Current
250
IB1=IB2=
IC
10
200 VCC=15V
ts
150
100
50
0
10
tR
tF
tDLY
100
1000
COLLECTOR CURRENT, IC (mA)
Turn On and Turn Off Times vs Collector
Current
500
IB1=I
B2=
IC
10
400 VCC=15V
300
200
100
0
10
tOFF
tON
100
1000
COLLECTOR CURRENT, IC (mA)
Rise Time vs Collector and Turn On Base
Currents
50
tR =15V
20
10
5
30ns
2
60ns
1
10
100
500
COLLECTOR CURRENT, IC (mA)
Power Dissipation vs Ambient Temperature
1
0.75
0.5
0.25
0
0
25 50 75 100 125 150
TEMPERATURE, (℃)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5
QW-R201-041.B