SI9956DY データシートの表示（PDF） - Vishay Semiconductors
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SI9956DY Datasheet PDF : 5 Pages
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Si9956DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.6
10
TJ = 150_C
TJ = 25_C
0.5
0.4
ID = 3.5 A
0.3
0.2
0.1
1
0.2 0.4 0.6
0.8
1.0
1.2
1.4
VSD – Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0
0
2
4
6
8
10
VGS – Gate-to-Source Voltage (V)
Single Pulse Power
30
0.2
25
ID = 250 µA
–0.0
20
–0.2
15
–0.4
10
–0.6
5
–0.8
–50 –25
0 25 50 75 100 125 150
TJ – Temperature (_C)
0
0.010
0.100
1.0
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10 30
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
1
10
30
www.vishay.com S FaxBack 408-970-5600
4
Document Number: 70140
S-00652—Rev. L, 27-Mar-00
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