TIC216B データシートの表示（PDF） - Comset Semiconductors

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TIC216B

SILICON BIDIRECTIONAL TRIODE THYRISTOR

Comset Semiconductors 

SEMICONDUCTORS

TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S

Note 6: This parameters must be measured using pulse techniques, tW = ≤1µs, duty cycle ≤ 2 %, voltage-sensing

contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch) from de device body.

Note 7: The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the

following characteristics : RG = 100Ω, tp(g) = 20 µs, tr = ≤ 15ns, f = 1 kHz.

MECHANICAL DATA CASE TO-220

Pin 1 :

Pin 2 :

Pin 3 :

Main Terminal 1

Main Terminal 2

Gate

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