VIS
Preliminary
VG3617161DT
16Mb CMOS Synchronous Dynamic RAM
Ordering information
Part Number
VG3617161DT-6
VG3617161DT-7
VG3617161DT-8
VG3617161DT-10
Frequency@CL3
166MHz
143MHz
125MHz
100MHz
Package
400mil
50-Pin
Plastic TSOP
VG3617161DT- 6
• VG
• 36
• 17161
•B
•T
•6
• VIS Memory Product
• Technology/Design Rule
• Device Type/Configuration
• Mask/Design Version
• Package Type, T: TSOP
• Cycle time, 6: 6ns, 7: 7ns, 8: 8ns, 10: 10ns
Packaging Information
•400mil, 50-Pin Plastic TSOP
MILLIMETERS
DIM
MIN.
NOM. MAX.
A
---
---
1.20
A1 0.05
---
0.15
A2 0.95
1.00
1.05
b
0.30
---
0.45
b1 0.30
---
0.40
c
0.12
---
0.21
c1 0.11
---
0.16
D 20.82 20.95
21.08
ZD
0.875 REF.
e
0.80 BASIC
E 11.56 11.76 11.96
E1 10.03 10.16 10.29
L
0.40
0.50
0.60
R
0.11
---
0.25
R1 0.11
---
---
INCHES
MIN.
NOM.
---
---
0.002
---
0.037
0.039
0.012
---
0.012
---
0.005
---
0.0045
---
0.820
0.825
0.0344 REF.
0.0315 BASIC
0.455 0.463
0.395 0.400
0.016 0.020
0.004
---
0.004
---
MAX.
0.047
0.006
0.041
0.018
0.016
0.008
0.006
0.830
0.471
0.405
0.024
0.010
---
NOTE:
1. CONTROLLING DIMENSION : MILLIMETERS
2. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION.
MOLD PROTRUSION SHALL NOT EXCEED 0.15mm(0.006") PER SIDE.
DIMENSION E1 DOES NOT INCLUDE INTERLEAD PROTRUSION.
INTERLEAD PROTRUSION SHALL NOT EXCEED 0.25mm(0.01") PER SIDE.
3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSIONS/INTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL NOT CAUSE THE LEAD TO
BE WIDER THAN THE MAX b DIMENSION BY MORE THAN 0.13mm.
DAMBAR INTRUSION SHALL NOT CAUSE THE LEAD TO BE NARROWER
THAN THE MIN b DIMENSION BY MORE THAN 0.07mm.
50
1
ZD
b
26
A2
E1
A1
DETAIL A
RAD R1
RAD R
B
c
B
L
0¢X~5¢X
25
D
b
b1
SECTION B-B
c1 c
BASE METAL
WITH PLATING
DETAIL A
A
E
48- e
0.100(0.004)
SEATING PLANE
Document:1G5-0160
Rev.1
Page 70