ZXMD63C03X データシートの表示（PDF） - Diodes Incorporated.

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ZXMD63C03X

30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

ZXMD63C03X

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Drain-Source Voltage

Gate- Source Voltage

Continuous Drain Current

(VGS=4.5V; TA=25°C)(b)(d)

(VGS=4.5V; TA=70°C)(b)(d)

Pulsed Drain Current (c)(d)

Continuous Source Current (Body Diode)(b)(d)

Pulsed Source Current (Body Diode)(c)(d)

Power Dissipation at TA=25°C (a)(d)

Linear Derating Factor

Power Dissipation at TA=25°C (a)(e)

Linear Derating Factor

Power Dissipation at TA=25°C (b)(d)

Linear Derating Factor

Operating and Storage Temperature Range

SYMBOL

VDSS

VGS

ID

IDM

IS

ISM

PD

PD

PD

Tj:Tstg

N-CHANNEL P-CHANNEL

30

-30

Ϯ20

UNIT

V

V

2.3

-2.0

1.8

-1.6

14

-9.6

1.5

-1.4

14

-9.6

0.87

6.9

1.04

8.3

1.25

10

-55 to +150

A

A

A

A

A

W

mW/°C

W

mW/°C

W

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)(d)

Junction to Ambient (b)(d)

Junction to Ambient (a)(e)

RθJA

RθJA

RθJA

143

°C/W

100

°C/W

120

°C/W

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр10 secs.

(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

(d) For device with one active die.

(e) For device with two active die running at equal power.

ISSUE 2 - SEPTEMBER 2007

2

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