ZXMD63C03X データシートの表示（PDF） - Diodes Incorporated.

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ZXMD63C03X

30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

ZXMD63C03X

N-CHANNEL

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

30

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

Gate-Source Threshold Voltage

VGS(th)

1.0

Static Drain-Source On-State Resistance (1) RDS(on)

Forward Transconductance (3)

DYNAMIC (3)

gfs

1.9

V

1 μA

100 nA

V

0.135 Ω

0.200 Ω

S

ID=250μA, VGS=0V

VDS=30V, VGS=0V

VGS=Ϯ 20V, VDS=0V

I

=25

D

0μ

A,

VDS=

VGS

VGS=10V, ID=1.7A

VGS=4.5V, ID=0.85A

VDS=10V,ID=0.85A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

290

pF

VDS=25 V, VGS=0V,

70

pF f=1MHz

20

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate Drain Charge

SOURCE-DRAIN DIODE

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

2.5

ns

4.1

ns VDD =15V, ID=1.7A

9.6

ns

RG=6.1Ω, RD=8.7Ω

(Refer to test circuit)

4.4

ns

8 nC

1.2 nC

2 nC

VDS=24V,VGS=10V,

ID=1.7A

(Refer to test circuit)

Diode Forward Voltage (1)

VSD

Reverse Recovery Time (3)

trr

Reverse Recovery Charge(3)

Qrr

NOTES:

(1) Measured under pulsed conditions. Width=300μs. Duty cycle Յ2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

16.9

9.5

0.95 V

ns

nC

Tj=25°C, IS=1.7A,

VGS=0V

Tj=25°C, IF=1.7A,

di/dt= 100A/μs

ISSUE 2 - SEPTEMBER 2007

5

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