BPW38 データシートの表示（PDF） - Fairchild Semiconductor
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BPW38 Datasheet PDF : 4 Pages
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BPW38
HERMETIC SILICON PHOTODARLINGTON
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown
Emitter-Base Breakdown
Collector-Base Breakdown
Collector-Emitter Leakage
Reception Angle at 1/2 Sensitivity
IC = 10 mA, Ee = 0
IE = 100 µA, Ee = 0
IC = 100 µA, Ee = 0
VCE = 12 V, Ee = 0
BVCEO
25
BVEBO
12
BVCBO
25
ICEO
—
0
—
—
—
V
—
—
V
—
—
V
—
100
nA
±8
—
Deg.
On-State Collector Current
Rise Time
Fall Time
Ee = 0.125 mW/cm2
VCE = 5 V(7)
IC(ON)
7.5
—
—
mA
IC = 10 mA, VCC = 10 V
RL = 100 1
tr
—
300
—
µs
IC = 10 mA, VCC = 10 V
RL = 100 1
tf
—
250
—
µs
TYPICAL PERFORMANCE CURVES
100
Ee = 5.0 mW/cm2
Ee = 2.0 mW/cm2
Ee = 1.0 mW/cm2
10
Ee = 0.5 mW/cm2
Ee = 0.2 mW/cm2
1.0
Ee = 0.1 mW/cm2
Ee = 0.05 mW/cm2
Normalized to:
VCE = 5 V
0.1
Ee = .2 mW/cm2
0
5
10
15
20
25
30
35
VCE - COLLECTOR TO EMITTER (V)
Fig. 1 Light Current vs. Collector to Emitter Voltage
10
1.0
0.1
Normalized to:
VCE = 5 V
Ee = 0.2 mW/cm2
0.01
-50
-25
0
25
50
75
100
125
TA - TEMPERATURE (˚C)
Fig. 2 Relative Light Current vs. Ambient Temperature
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