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BYW29G-200(1999) データシートの表示(PDF) - STMicroelectronics

部品番号
コンポーネント説明
メーカー
BYW29G-200
(Rev.:1999)
ST-Microelectronics
STMicroelectronics 
BYW29G-200 Datasheet PDF : 5 Pages
1 2 3 4 5
BYW29G-200
THERMAL RESISTANCE
Symbol
Rth (j-c)
Parameter
Junction to case thermal resistance
Value
2.8
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
IR *
Reverse leakage current VR = VRRM
Tj = 25°C
Tj = 100°C
VF ** Forward voltage drop
IF = 5 A
Tj = 125°C
IF = 10 A
Tj = 125°C
IF = 10 A
Tj = 25°C
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.65 x IF(AV) + 0.040 IF2(RMS)
Min. Typ. Max. Unit
10 µA
0.6 mA
0.85 V
1.05
1.15
RECOVERY CHARACTERISTICS
Symbol
Parameter
Test Conditions
trr
Reverse recovery Tj = 25°C
time
Irr = 0.25 A
IF = 0.5A
IR = 1A
Tj = 25°C
IF = 1A
dIF/dt = -50A/µs VR = 30V
tfr
Forward recovery Tj = 25°C
IF = 1A
time
dIF/dt = 100A/µs
VFR = 1.1 x VF max
VFP Peak forward
voltage
Tj = 25°C IF = 1A
dIF/dt = 100A/µs
Min. Typ. Max. Unit
25 ns
35
ns
15
V
2
PIN OUT configuration in D2PAK:
2/5

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