P3C1024L70TC データシートの表示（PDF） - Semiconductor Corporation
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P3C1024L70TC Datasheet PDF : 10 Pages
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P3C1024L
CAPACITANCES(4)
(V = 3.3V, T = 25°C, f = 1.0 MHz)
CC
A
Symbol
Parameter
C
Input Capacitance
IN
COUT
Output Capacitance
Test Conditions
VIN = 0V
VOUT = 0V
Max
8
9
Unit
pF
pF
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
Temperature Range -55
-70 Unit
I
CC
Dynamic Operating Current
Commercial
Industrial
10
8
mA
12
10
mA
Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The
device
is
continuously
enabled
for
writing,
i.e.,
CE
2
≥
V
IH
(min),
CE
1
and
WE
≤
V
IL
(max),
OE
is high.
Switching
inputs are 0V and 3V.
AC ELECTRICAL CHARACTERISTICS - READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
-55
-70
Symbol
Parameter
Min
Max
Min
Max
Unit
tRC Read Cycle Time
55
70
ns
tAA Address Access Time
55
70
ns
t
AC
Chip Enable Access
Time
55
70
ns
t
Output Hold from
OH Address Change
10
10
ns
tLZ
Chip Enable to
Output in Low Z
10
10
ns
tHZ
Chip Disable to
Output in High Z
20
25
ns
tOE
Output Enable Low
to Data Valid
25
35
ns
t
Output Enable Low to
OLZ
Low Z
5
5
ns
tOHZ
Output Enable High
to High Z
20
25
ns
tPU
Chip Enable to Power
Up Time
0
0
ns
tPD
Chip Disable to
Power Down Time
55
70
ns
Document # SRAM132 REV OR
Page 3 of 9
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