SGH80N60UFD データシートの表示（PDF） - Fairchild Semiconductor
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SGH80N60UFD Datasheet PDF : 8 Pages
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3000
1000
Eoff
100
Eon
10
0
10
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 5Ω
T = 25℃
C
T = 125℃
C
20 30 40 50 60 70 80
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
7.5
Ω
T = 25℃
12
C
9
300 V
6
V = 100 V
CC
200 V
3
0
0
30
60
90
120
150
180
Gate Charge, Q [ nC ]
g
Fig 14. Gate Charge Characteristics
500
IC MAX. (Pulsed)
100
IC MAX. (Continuous)
10
50us
100us
1㎳
DC Operation
1 Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Fig 15. SOA Characteristics
500
100
10
Safe Operating Area
VGE=20V, TC=100oC
1
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
single pulse
1E-3
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100
101
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGH80N60UFD Rev. B1
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