BC856AWT1(2001) データシートの表示（PDF） - ON Semiconductor

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BC856AWT1
(Rev.:2001)

General Purpose Transistors

ON Semiconductor 

BC856AWT1 Series, BC857BWT1 Series, BC858AWT1 Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = –10 mA)

BC856 Series

BC857 Series

BC858 Series

V(BR)CEO –65

–

–

V

–45

–

–

–30

–

–

Collector–Emitter Breakdown Voltage

(IC = –10 µA, VEB = 0)

BC856 Series

BC857B Only

BC858 Series

V(BR)CES –80

–

–

V

–50

–

–

–30

–

–

Collector–Base Breakdown Voltage

(IC = –10 mA)

BC856 Series

BC857 Series

BC858 Series

V(BR)CBO –80

–

–

V

–50

–

–

–30

–

–

Emitter–Base Breakdown Voltage

(IE = –1.0 mA)

BC856 Series

BC857 Series

BC858 Series

V(BR)EBO –5.0

–

–

V

–5.0

–

–

–5.0

–

–

Collector Cutoff Current (VCB = –30 V)

Collector Cutoff Current (VCB = –30 V, TA = 150°C)

ON CHARACTERISTICS

DC Current Gain

(IC = –10 µA, VCE = –5.0 V)

BC856A, BC585A

BC856B, BC857B, BC858B

BC857C

ICBO

–

–

–

–15

nA

–

–4.0

µA

hFE

–

90

–

–

–

150

–

–

270

–

(IC = –2.0 mA, VCE = –5.0 V) BC856A, BC858A

BC856B, BC857B, BC858B

BC857C

Collector–Emitter Saturation Voltage

(IC = –10 mA, IB = –0.5 mA)

(IC = –100 mA, IB = –5.0 mA)

Base–Emitter Saturation Voltage

(IC = –10 mA, IB = –0.5 mA)

(IC = –100 mA, IB = –5.0 mA)

Base–Emitter On Voltage

(IC = –2.0 mA, VCE = –5.0 V)

(IC = –10 mA, VCE = –5.0 V)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product

(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)

Output Capacitance

(VCB = –10 V, f = 1.0 MHz)

Noise Figure

(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ,

f = 1.0 kHz, BW = 200 Hz)

125

180

250

220

290

475

420

520

800

VCE(sat)

–

–

V

–

–0.3

–

–0.65

VBE(sat)

V

–

–0.7

–

–

–0.9

–

VBE(on)

–0.6

–

V

–

–0.75

–

–0.82

fT

100

–

–

MHz

Cob

–

–

4.5

pF

NF

–

–

10

dB

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