BC856AWT1(2001) データシートの表示（PDF） - ON Semiconductor

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BC856AWT1
(Rev.:2001)

General Purpose Transistors

ON Semiconductor 

BC856AWT1 Series, BC857BWT1 Series, BC858AWT1 Series

1.0

0.7

0.5

D = 0.5

0.2

0.3

0.2

0.1 0.05

0.1

0.07

0.05

0.03

0.02

0.01

0.1 0.2

0.5

SINGLE PULSE

SINGLE PULSE

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

1.0 2.0

5.0 10

20

50 100 200

t, TIME (ms)

Figure 13. Thermal Response

ZθJC(t) = r(t) RθJC

RθJC = 83.3°C/W MAX

ZθJA(t) = r(t) RθJA

RθJA = 200°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) RθJC(t)

500 1.0Ăk 2.0Ăk

5.0Ăk 10Ăk

-200

1s

3 ms

-100

-50

TA = 25°C TJ = 25°C

BC858

-10

BC857

BC856

-5.0

-2.0

-1.0

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

-5.0 -10

-30 -45 -65 -100

VCE, COLLECTOR-EMITTER VOLTAGE (V)

Figure 14. Active Region Safe Operating Area

The safe operating area curves indicate IC–VCE lim-

its of the transistor that must be observed for reliable op-

eration. Collector load lines for specific circuits must fall

below the limits indicated by the applicable curve.

The data of Figure 14 is based upon TJ(pk) = 150°C; TC

or TA is variable depending upon conditions. Pulse curves

are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C.

TJ(pk) may be calculated from the data in Figure 13. At

high case or ambient temperatures, thermal limitations

will reduce the power that can be handled to values less

than the limitations imposed by the secondary breakdown.

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