IRFZ44NSTRRPBF データシートの表示（PDF） - International Rectifier
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IRFZ44NSTRRPBF Datasheet PDF : 11 Pages
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IRFZ44NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
EAS
Single Pulse Avalanche Energy
Min. Typ. Max. Units
Conditions
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 17.5 mΩ VGS = 10V, ID = 25A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
19 ––– ––– S VDS = 25V, ID = 25A
––– ––– 25
––– ––– 250
µA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 63
ID = 25A
––– ––– 14 nC VDS = 44V
––– ––– 23
VGS = 10V, See Fig. 6 and 13
––– 12 –––
VDD = 28V
––– 60 ––– ns ID = 25A
––– 44 –––
RG = 12Ω
––– 45 –––
VGS = 10V, See Fig. 10
––– 7.5 ––– nH Between lead,
and center of die contact
––– 1470 –––
VGS = 0V
––– 360 –––
VDS = 25V
––– 88 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 530
150 mJ IAS = 25A, L = 0.47mH
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 49
A showing the
integral reverse
G
––– ––– 160
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V
––– 63 95 ns TJ = 25°C, IF = 25A
––– 170 260 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 0.48mH
RG = 25Ω, IAS = 25A. (See Figure 12)
ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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