KSD794AYSTU データシートの表示（PDF） - Fairchild Semiconductor

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KSD794AYSTU

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSD794/794A

Audio Frequency Power Amplifier

• Complement to KSB744/KSB744A

1

TO-126

1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

Collector- Base Voltage

Collector-Emitter Voltage

: KSD794

: KSD794A

VEBO

Emitter- Base Voltage

IC

Collector Current (DC)

ICP

*Collector Current (Pulse)

IB

Base Current (DC)

PC

Collector Dissipation (Ta=25°C)

PC

Collector Dissipation (TC=25°C)

TJ

Junction Temperature

TSTG

Storage Temperature

* PW≤10ms, Duty Cycle≤50%

Value

70

45

60

5

3

5

0.6

1

10

150

- 55 ~ 150

Units

V

V

V

V

A

A

A

W

W

°C

°C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

Parameter

Test Condition

ICBO

Collector Cut-off Current

IEBO

Emitter Cut-off Current

hFE1

hFE2

* DC Current Gain

VCE(Sat) * Collector-Emitter Saturation Voltage

VBE(Sat) * Base-Emitter Saturation Voltage

fT

Current Gain Bandwidth Product

Cob

Output Capacitance

* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed

VCB = 45V, IE = 0

VEB = 3V, IC = 0

VCE = 5V, IC = 20mA

VCE = 5V, IC = 0.5A

IC =1.5A, IB = 0.15A

IC =1.5A, IB = 0.15A

VCE = 5V, IE = 0.1A

VCB = 10V, IE = 0, f = 1MHz

Min.

30

60

Typ.

70

100

0.3

0.8

60

40

Max.

1

1

Units

µA

µA

320

2

V

2

V

MHz

pF

hFE Classificntion

Classification

hFE2

R

60 ~ 120

O

100 ~ 200

Y

160 ~ 320

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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