2N6667_05 データシートの表示（PDF） - ON Semiconductor
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2N6667_05 Datasheet PDF : 6 Pages
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2N6667, 2N6668
Darlington Silicon
Power Transistors
Designed for general−purpose amplifier and low speed switching
applications.
• High DC Current Gain −
hFE = 3500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 200 mAdc
VCEO(sus) = 60 Vdc (Min) − 2N6667
= 80 Vdc (Min) − 2N6668
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• TO−220AB Compact Package
• Complementary to 2N6387, 2N6388
• Pb−Free Packages are Available*
http://onsemi.com
PNP SILICON
DARLINGTON
POWER TRANSISTORS
10 A, 60−80 V, 65 W
MARKING
DIAGRAM
4
COLLECTOR
BASE
≈ 8 k ≈ 120
EMITTER
Figure 1. Darlington Schematic
1
2
3
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A−09
TO−220AB
2N666x
AYWWG
x = 7 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
2N6667
TO−220AB
50 Units/Rail
2N6667G
TO−220AB
(Pb−Free)
50 Units/Rail
2N6668
TO−220AB
50 Units/Rail
2N6668G
TO−220AB
(Pb−Free)
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
June, 2005 − Rev. 5
Publication Order Number:
2N6667/D
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