IGB10N60T データシートの表示（PDF） - Infineon Technologies

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IGB10N60T

Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology

Infineon Technologies 

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

tr

td(off)

tf

Eon

Eoff

Ets

IGB10N60T

TRENCHSTOP™ Series

p

VCC=400V,IC=10A,

-

VGE=0/15V,rG=23,

L=60nH,C=40pF

-

-

L, C from Fig. E

-

Energy losses include

“tail” and diode reverse

-

recovery.

-

8

215

38

0.16

0.27

0.43

-

-

-

- mJ

-

-

Switching Characteristic, Inductive Load, at Tj=175 C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=175C,

VCC=400V,IC=10A,

VGE=0/15V,rG=23,

L=60nH,C=40pF

L, C from Fig. E

Energy losses include

“tail” and diode reverse

recovery.

min.

-

-

-

-

-

-

-

Value

typ.

10

11

233

63

0.26

0.35

0.61

Unit

max.

- ns

-

-

-

- mJ

-

-

IFAG IPC TD VLS

3

Rev. 2.1 30.04.2015

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