IRG4PSC71U データシートの表示（PDF） - International Rectifier

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IRG4PSC71U

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier 

IRG4PSC71U

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)CES

Collector-to-Emitter Breakdown Voltage 600

V(BR)ECS

Emitter-to-Collector Breakdown Voltage  18

∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage –––

–––

VCE(ON)

Collector-to-Emitter Saturation Voltage

–––

–––

VGE(th)

Gate Threshold Voltage

3.0

∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage –––

gfe

Forward Transconductance 

47

ICES

Zero Gate Voltage Collector Current

–––

–––

–––

IGES

Gate-to-Emitter Leakage Current

–––

––– ––– V VGE = 0V, IC = 250µA

––– ––– V VGE = 0V, IC = 1.0A

0.45 ––– V/°C VGE = 0V, IC = 5.0mA

1.67 2.0

IC = 60A

VGE = 15V

1.95 ––– V

1.71 –––

IC = 100A

See Fig.2, 5

IC = 60A , TJ = 150°C

––– 6.0

VCE = VGE, IC = 250µA

-10 ––– mV/°C VCE = VGE, IC = 1.0mA

70 ––– S VCE = 50V, IC = 60A

––– 500 µ A VGE = 0V, VCE = 600V

––– 2.0

VGE = 0V, VCE = 10V, TJ = 25°C

––– 5.0 mA VGE = 0V, VCE = 600V, TJ = 150°C

––– ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Qg

Qge

Qgc

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

td(on)

tr

td(off)

tf

Ets

LE

Cies

Coes

Cres

Notes:

Parameter

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Switching Loss

Internal Emitter Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

––– 340 520

IC = 60A

––– 44 66 nC VCC = 400V

––– 160 240

VGE = 15V

See Fig. 8

––– 34 –––

––– 50 ––– ns TJ = 25°C

––– 56 84

IC = 60A, VCC = 480V

––– 86 130

VGE = 15V, RG = 5.0Ω

––– 0.42 –––

Energy losses include "tail"

––– 1.99 ––– mJ See Fig. 10, 11, 13, 14

––– 2.41 3.2

––– 30 –––

TJ = 150°C,

––– 49 ––– ns IC = 60A, VCC = 480V

––– 129 –––

VGE = 15V, RG = 5.0Ω

––– 175 –––

Energy losses include "tail"

––– 4.5 ––– mJ See Fig. 13, 14

––– 13 ––– nH Measured 5mm from package

––– 7500 –––

VGE = 0V

––– 720 ––– pF VCC = 30V

––– 93 –––

ƒ = 1.0MHz

See Fig. 7

 Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,

(See fig. 13a)

„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.

… Pulse width 5.0µs, single shot.

† Current limited by the package, (Die current = 100A)

ƒ Repetitive rating; pulse width limited by maximum

junction temperature.

2

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