SQM120N06-04L-GE3 データシートの表示（PDF） - Vishay Semiconductors

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SQM120N06-04L-GE3

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

Vishay Semiconductors 

www.vishay.com

SQM120N06-04L

Vishay Siliconix

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

PRODUCT SUMMARY

VDS (V)

RDS(on) () at VGS = 10 V

RDS(on) () at VGS = 4.5 V

ID (A)

Configuration

TO-263

60

0.0035

0.0050

120

Single

D

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET® Power MOSFET

• Package with Low Thermal Resistance

• AEC-Q101 Qualifiedd

• 100 % Rg and UIS Tested

• Compliant to RoHS Directive 2002/95/EC

G

G DS

Top View

S

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

TO-263

SQM120N06-04L-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain Currenta

TC = 25 °C

TC = 125 °C

ID

Continuous Source Current (Diode Conduction)a

IS

Pulsed Drain Currentb

IDM

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

IAS

EAS

Maximum Power Dissipationb

TC = 25 °C

TC = 125 °C

PD

Operating Junction and Storage Temperature Range

TJ, Tstg

LIMIT

60

± 20

120

120

120

480

75

281

375

125

- 55 to + 175

THERMAL RESISTANCE RATINGS

PARAMETER

Junction-to-Ambient

Junction-to-Case (Drain)

Notes

a. Package limited.

b. Pulse test; pulse width  300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

PCB Mountc

SYMBOL

RthJA

RthJC

LIMIT

40

0.4

UNIT

V

A

mJ

W

°C

UNIT

°C/W

S11-2036-Rev. B, 17-Oct-11

1

Document Number: 67046

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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