SQM120N06-04L-GE3 データシートの表示（PDF） - Vishay Semiconductors
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SQM120N06-04L-GE3 Datasheet PDF : 7 Pages
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SQM120N06-04L
Vishay Siliconix
225
200
VGS = 10 V thru 5 V
175
150
125
VGS = 4 V
100
75
50
25
VGS = 3 V
0
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Output Characteristics
180
150
120
90
60
30
0
0
TC = 25 °C
TC = 125 °C
TC = - 55 °C
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
250
0.010
200
TC = - 55 °C
150
TC = 25 °C
100
TC = 125 °C
50
0.008
0.006
0.004
0.002
VGS = 4.5 V
VGS = 10 V
0
0
16
32
48
64
80
ID - Drain Current (A)
Transconductance
12 000
10 000
8000
Ciss
6000
4000
2000
Coss
Crss
0
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
0
0
20
40
60
80
100 120
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 110 A
8
6
VDS = 30 V
4
2
0
0 20 40 60 80 100 120 140 160 180 200
Qg - Total Gate Charge (nC)
Gate Charge
S11-2036-Rev. B, 17-Oct-11
3
Document Number: 67046
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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