SQM120N06-04L-GE3 データシートの表示（PDF） - Vishay Semiconductors
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SQM120N06-04L-GE3 Datasheet PDF : 7 Pages
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.1
100
ID = 30 A
1.8
1.5
VGS = 10 V
VGS = 4.5 V
10
TJ = 150 °C
1
1.2
0.1
0.9
0.01
SQM120N06-04L
Vishay Siliconix
TJ = 25 °C
TJ = - 50 °C
0.6
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
0.04
0.03
0.02
TJ = 150 °C
0.01
0
TJ = 25 °C
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
80
ID = 10 mA
77
0.001
0
0.8
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.4
0
- 0.4
- 0.8
- 1.2
ID = 5 mA
ID = 250 μA
- 1.6
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
74
71
68
65
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S11-2036-Rev. B, 17-Oct-11
4
Document Number: 67046
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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