IPD640N06LG(2006) データシートの表示（PDF） - Infineon Technologies

部品番号

コンポーネント説明

メーカー

IPD640N06LG
(Rev.:2006)

OptiMOS® Power-Transistor

Infineon Technologies 

Parameter

Symbol Conditions

Thermal characteristics

Thermal resistance, junction - case

SMD version, device on PCB

R thJC

R thJA

minimal footprint

6 cm2 cooling area2)

IPD640N06L G

min.

Values

typ.

Unit

max.

-

-

3.2 K/W

-

-

75

-

-

50

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

V (BR)DSS V GS=0 V, I D=1 mA

60

V GS(th) V DS=V GS, I D=16 µA

1.2

I DSS

V DS=60 V, V GS=0 V,

T j=25 °C

-

V DS=60 V, V GS=0 V,

T j=125 °C

-

I GSS

V GS=20 V, V DS=0 V

-

R DS(on) V GS=10 V, I D=18 A

-

V GS=4.5 V, I D=12 A

-

RG

-

g fs

|V DS|>2|I D|R DS(on)max,

I D=18 A

9.5

-

1.6

0.01

1

10

47

64

1.2

19

-V

2

1 µA

100

100 nA

64 mΩ

85

-Ω

-S

2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 1.2

page 2

2006-03-27

Share Link: