STD65N55F3(2007) データシートの表示（PDF） - STMicroelectronics

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STD65N55F3
(Rev.:2007)

N-channel 55V - 8.0mΩ - 65A - DPAK STripFET™ Power MOSFET

STMicroelectronics 

STD65N55F3

Electrical characteristics

Table 5. Switching on/off (inductive load)

Symbol

Parameter

Test conditions

td(on)

tr

Turn-on delay time

Rise time

td(off)

tf

Turn-off delay time

Fall time

VDD=27V, ID= 32A,

RG=4.7Ω, VGS=10V

(see Figure 14)

VDD=27V, ID= 32A,

RG=4.7Ω, VGS=10V

(see Figure 14)

Min. Typ. Max. Unit

20

ns

50

ns

35

ns

11.5

ns

Table 6.

Symbol

Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM

Source-drain current

Source-drain current (pulsed)(1)

VSD Forward on voltage

ISD=65A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=65A, di/dt =100A/µs,

VDD=25V, Tj=150°C

(see Figure 16)

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

65 A

260 A

1.5 V

47

ns

87

nC

3.7

A

5/13

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