IS61WV102416BLL-10MI データシートの表示（PDF） - Integrated Silicon Solution

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IS61WV102416BLL-10MI

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

Integrated Silicon Solution 

IS61WV102416ALL

IS61WV102416BLL

IS64WV102416BLL

READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)

-20 ns

Symbol

Parameter Min. Max. Unit

trc

Read Cycle Time

20 —

ns

taa

Address Access Time

— 20

ns

toha

Output Hold Time

2.5 —

ns

tace

CE Access Time

— 20

ns

tdoe

OE Access Time

—

8

ns

thzoe(2)

OE to High-Z Output

0

8

ns

tlzoe(2)

OE to Low-Z Output

0

—

ns

thzce(2

CE to High-Z Output

0

8

ns

tlzce(2)

CE to Low-Z Output

3

—

ns

tba

LB, UB Access Time

—

8

ns

thzb

LB, UB to High-Z Output

0

8

ns

tlzb

LB, UB to Low-Z Output

0

—

ns

Notes:

1.  Test conditions assume signal transition times of 1.5 ns or less, timing reference levels of 1.25V, input pulse levels of 0.4V to

Vdd-0.3V and output loading specified in Figure 1a.

2.  Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

3.  Not 100% tested.

10

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. G

06/02/2014

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