ZXMN6A25K データシートの表示（PDF） - Diodes Incorporated.

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ZXMN6A25K

60V DPAK N-channel enhancement mode MOSFET

Diodes Incorporated. 

ZXMN6A25K

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Static

Drain-source breakdown

voltage

V(BR)DSS

Zero gate voltage drain current IDSS

Gate-body leakage

IGSS

Gate-source threshold voltage VGS(th)

Static drain-source on-state

resistance (*)

RDS(on)

Forward transconductance (*)(‡) gfs

Dynamic(‡)

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance Crss

Switching (†) (‡)

Turn-on-delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Gate charge

Qg

Total gate charge

Qg

Gate-source charge

Qgs

Gate drain charge

Qgd

Source-drain diode

Diode forward voltage(*)

VSD

Reverse recovery time(‡)

trr

Reverse recovery charge(‡)

Qrr

Min.

60

1

Typ.

10.2

1063

104

64

3.8

4.0

26.2

10.6

11.0

20.4

4.1

5.1

0.85

22.0

21.4

Max.

1.0

100

3

0.050

0.070

0.95

Unit Conditions

V ID= 250␮A, VGS=0V

␮A VDS= 60V, VGS=0V

nA VGS=±20V, VDS=0V

V ID= 250␮A, VDS=VGS

⍀ VGS= 10V, ID= 3.6A

⍀ VGS= 4.5V, ID = 3.0A

S VDS= 15V, ID= 4.5A

pF VDS= 30V, VGS=0V

pF f=1MHz

pF

ns VDD= 30V, ID= 1A

ns RG≅6.0⍀, VGS= 10V

ns

ns

nC VDS= 30V, VGS= 5V

ID= 1.4A

nC VDS= 30V, VGS= 10V

nC ID= 1.4A

nC

V Tj=25°C, IS= 5.5A,

VGS=0V

ns Tj=25°C, IS= 2.2A,

nC di/dt=100A/␮s

NOTES:

(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.

(†) Switching characteristics are independent of operating junction temperature

(‡) For design aid only, not subject to production testing.

Issue 3 - Novmber 2006

4

© Zetex Semiconductors plc 2006

www.zetex.com

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