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R5F21133FP(2010) データシートの表示(PDF) - Renesas Electronics

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R5F21133FP
(Rev.:2010)
Renesas
Renesas Electronics 
R5F21133FP Datasheet PDF : 33 Pages
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R8C/13 Group
5. Electrical Characteristics
Table 5.9 High-speed On-Chip Oscillator Circuit Electrical Characteristics
Symbol
Parameter
Measuring condition
High-speed on-chip oscillator frequency 1 / {td(HRoffset)+td(HR)} when the
reset is released
td(HRoffset) Settable high-speed on-chip oscillator minimum period
td(HR)
High-speed on-chip oscillator period adjusted unit
High-speed on-chip oscillator frequency temperature dependence(1)
High-speed on-chip oscillator frequency temperature dependence(2)
NOTES:
1. The measuring condition is Vcc=AVcc=5.0 V and Topr=25 °C.
VCC=5.0V, Topr=25 °C
Set "4016" in the HR1 register
VCC=5.0V, Topr=25 °C
Set "0016" in the HR1 register
Differences when setting "0116" and "0016"
in the HR register
Frequency fluctuation in temperature range
of -10 °C to 50 °C
Frequency fluctuation in temperature range
of -40 °C to 85 °C
Min.
Standard
Typ.
Max.
Unit
8
MHz
61
ns
1
ns
±5
%
±10
%
Table 5.10 Power Circuit Timing Characteristics
Symbol
Parameter
Measuring condition
td(P-R) Time for internal power supply stabilization during powering-on(2)
td(R-S) STOP release time(3)
NOTES:
1. The measuring condition is Vcc=AVcc=2.7 to 5.5 V and Topr=25 °C.
2. This shows the wait time until the internal power supply generating circuit is stabilized during power-on.
3. This shows the time until BCLK starts from the interrupt acknowledgement to cancel stop mode.
Standard
Min. Typ.
Max. Unit
1
2000 µs
150
µs
Table 5.11 Electrical Characteristics (1) [Vcc=5V]
Symbol
"H" output voltage
VOH
"L" output voltage
VOL
VT+-VT- Hysteresis
Parameter
Except XOUT
XOUT
Except P10 to P17, XOUT
P10 to P17
XOUT
INT0, INT1, INT2, INT3, KI0, KI1,
KI2, KI3, CNTRo, CNTR1, TCIN,
RxD0, RxD1, P45
Measuring condition
IOH=-5mA
IOH=-200µA
Drive capacity HIGH
Drive capacity LOW
IOH=-1 mA
IOH=-500µA
IOL= 5 mA
IOL= 200 µA
Drive capacity HIGH IOL= 15 mA
Drive capacity LOW IOL= 5 mA
Drive capacity LOW IOL= 200 µA
Drive capacity HIGH IOL= 1 mA
Drive capacity LOW IOL=500 µA
Min.
VCC-2.0
VC C-0 . 3
VC C-2 . 0
VCC-2.0
Standard
Typ.
Max.
VCC
VC C
VCC
VC C
2.0
0.45
2.0
2.0
0.45
2.0
2.0
0.2
1.0
RESET
0.2
II H
"H" input current
VI=5V
II L
"L" input current
VI=0V
RPULLUP Pull-up resistance
VI=0V
30
RfXIN
Feedback resistance
XIN
fRING-S
Low-speed on-chip oscillator frequency
40
VRAM
RAM retention voltage
At stop mode
2.0
NOTES:
1. Referenced to VCC = AVCC = 4.2 to 5.5V at Topr = -20 to 85 °C / -40 to 85 °C, f(XIN)=20MHz unless otherwise specified.
2.2
5.0
-5.0
50
167
1.0
125
250
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
k
M
kHz
V
Rev.1.20 Jan 27, 2006 page 19 of 27
REJ03B0069-0120

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